SSM6N40TU 2014-03-01 1 toshiba field-effect transistor silicon n channel mos type SSM6N40TU power management switch applications high-speed switching applications ? 4 v drive ? n-ch 2-in-1 ? low on-resistance: r on = 182m ? (max) (@v gs = 4 v) r on = 122m ? (max) (@v gs = 10 v) absolute maximum ratings (ta = 25 c) (q1, q2 common) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 1.6 drain current pulse i dp 3.2 a drain power dissipation p d (note1) 500 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note1: mounted on an fr4 board. (total dissipation) (25.4 mm 25.4 mm 1.6 mm, cu pad : 645 mm 2 ) unit: mm 0.3-0.05 6 1.70.1 2.10.1 1.30.1 1 2 0.65 0.65 3 2.00.1 5 4 0.70.05 +0.1 0.1660.05 jedec D jeita D toshiba 2-2t1b weight: 7.0mg (typ.) 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 uf6 start of commercial production 2008-01
SSM6N40TU 2014-03-01 2 electrical characteristics (t a = 25c) (q1,q2 common) characteristics symbol test conditions min typ. max unit v (br) dss i d = 1 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = -20 v 15 ? ? v drain cutoff current i dss v ds =30 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 1 ma 1.0 ? 2.6 v forward transfer admittance |y fs | v ds = 5 v, i d = 1a (note 2) 1.9 3.7 ? s i d = 1 a, v gs = 10 v (note 2) ? 96 122 drain-source on-resistance r ds (on) i d = 0.5 a, v gs = 4 v (note 2) ? 130 182 m input capacitance c iss ? 180 ? output capacitance c oss ? 34 ? reverse transfer capacitance c rss v ds = 15 v, v gs = 0 v, f = 1 mhz ? 27 ? pf total gate charge q g ? 5.1 ? gate? source charge q gs ? 3.9 ? gate? drain charge q gd v ds = 15 v, i d = 1.6 a, v gs = 10 v ? 1.2 ? nc turn-on time t on ? 9.5 ? switching time turn-off time t off v dd = 15 v, i d = 0.5 a v gs = 0 to 4 v, r g = 10 ? 9.0 ? ns drain-source forward voltage v dsf i d = -1.6 a, v gs = 0 v (note 2) ? -0.8 -1.2 v note 2: pulse test switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) 6 4 1 2 3 5 4 123 65 (c) v out v dd = 15 v r g = 10 duty 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 4 v 0 10 s r g t f t on 90% 10% 4 v 0 v 10% 90% t off t r v dd v ds ( on ) nn2 q2 q1
SSM6N40TU 2014-03-01 3 notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
SSM6N40TU 2014-03-01 4 ambient temperature ta (c) ambient temperature ta (c) r ds (on) ? i d drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 3 0 0.2 0.4 0.6 2 vgs = 2.5 v 10 v 1 common source ta = 25 c 4.0 v 3.3 v 3.0 v gate-source voltage v gs (v) i d ? v gs drain current i d (a) 10 0 0.1 1 0.001 0.01 0.0001 4.0 ? 25 c ta = 100 c 25 c 2.0 v th ? ta gate threshold voltage v th (v) 2.0 0 ? 50 0 150 50 100 r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 200 100 400 drain-source on-resistance r ds (on) (m ? ) 0 gate-source voltage v gs (v) 10 0 r ds (on) ? v gs 400 200 20 ? 25 c ta = 100 c 25 c i d = 1.0a common source common source v ds = 5 v vgs = 10v drain current i d (a) drain-source on-resistance r ds (on) (m ? ) 0 1 2 3 0 400 200 4.0 v common source ta = 25c 4 4 1.0 common source v ds = 5 v i d = 1 ma 5.0 v common source 0.8 1.0 3.5 v i d = 0.5 a / v gs = 4.0 v 1.0 a / 10 v 300 100 300 100 300 100
SSM6N40TU 2014-03-01 5 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 10 1 0.1 1 3 0.3 0.01 drain-source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 10 100 30 50 3 5 common source ta = 25c f = 1 mhz v gs = 0 v drain current i d (a) switching time t (ns) t ? i d 1 0.01 100 0.1 1000 1 10 10 t f t on t r common source v dd = 15 v v gs = 0 4.0 v ta = 25 c r g = 10 drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 ?0.5 ?1.0 ? 25 c ta =100 c 25 c ?1.5 common source v gs = 0 v g d s i dr t off 10 c iss c oss c rss 500 300 1000 common source v ds = 5 v ta = 25c total gate charge qg (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 vdd = 15 v 2 4 8 6 10 6 2 common source i d = 1.6a ta = 25c vdd = 24 v 4 1 3 5
SSM6N40TU 2014-03-01 6 ambient temperature ta (c) p d ? t a drain power dissipation p d * (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) pulse width t w (s) r th ? t w transient thermal impedance rth (c/w) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) 10 *: total rating dc t=10s
SSM6N40TU 2014-03-01 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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